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IXYS
IXS839 / IXS839A / IXS839B
Figure 3. IXS839B Functional Block Diagram and General Application Circuit
5V
VIN
5
VDD
DBST
UVLO
10
BST
SD
9
HGD
Q1
1
OVERLAP
PWM
2
PROTECTION
CIRCUIT
8
SW
CBST
VOUT
DLY
4
CDLY
3
LSD
Ordering Information
6
7
LGD
PGND
Q2
Part No.
Description
Package
Pack Quantity
IXS839S1
Under Voltage Lockout
8-Pin SOIC
98
(Tube)
IXS839S1T/R
IXS839AQ2
IXS839AQ2T/R
IXS839BQ2
IXS839BQ2T/R
Under Voltage Lockout
Driver Shutdown, Low Side Shutdown
Driver Shutdown, Low Side Shutdown
Under Voltage Lockout , Driver Shutdown, Low Side Shutdown
Under Voltage Lockout , Driver Shutdown, Low Side Shutdown
8-Pin SOIC
10-Pin QFN
10-Pin QFN
10-Pin QFN
10-Pin QFN
2500 (Tape & Reel)
121 (Tube)
2000 (Tape & Reel)
121 (Tube)
2000 (Tape & Reel)
Absolute Maximum Ratings
Parameter
V DD
BST
BST to SW
SW
PWM
Operating Ambient Temp Range
Operating Junction Temp Range
θ JA
θ JC
Storage Temp Range
Lead Temperature (Soldering, 10 sec)
Rating
-0.3V to +7V
-0.3V to +30V
-0.3V to +7V
-0.2V to +24V
-0.3V to +7V
-40°C to +85°C
-40°C to +125°C
150°C/W
40°C/W
-65°C to +150°C
+300°C
Absolute Maximum Ratings are stress ratings.
Stresses in excess of these ratings can cause
permanent damage to the device. Functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this data sheet is not implied. Exposure
of the device to the absolute maximum ratings for
an extended period may degrade the device and
affect its reliability.
ESD Warning
ESD (electrostatic discharge) sensitive device. Electrostatic charges can readily accumulate on test equipment and the human body
in excess of 4000 Volts. This energy can discharge without detection. Although the IXS839/839A/839B feature proprietary ESD
protection circuitry, permanent damage may be sustained if subjected to high energy electrostatic discharges. Proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
2
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